A method of manufacturing an integrated circuit (IC) can utilizes semiconductor substrate configured in accordance with a trench process. The substrate utilizes trenches in a base layer to induce stress in a layer. The substrate can include silicon. The trenches define pillars on a back side of a bulk...http://www.google.es/patents/US7144818?utm_source=gb-gplus-sharePatente US7144818 - Semiconductor substrate and processes therefor
