An improved gate structure for a MOSFET device exhibits a reduced level of 1/f noise or "flicker noise", while maintaining the control of boron penetration into the substrate of the MOSFET device. The gate structure for the MOSFET device includes a gate electrode and a gate oxide layer wherein nitrogen...http://www.google.es/patents/US6653679?utm_source=gb-gplus-sharePatente US6653679 - Reduced 1/f noise in MOSFETs
