A semiconductor device having good TFT characteristics is realized. By using a high purity target as a target, using a single gas, argon (Ar), as a sputtering gas, setting the substrate temperature equal to or less than 300° C., and setting the sputtering gas pressure from 1.0 Pa to 3.0 Pa, the film...http://www.google.es/patents/US7245018?utm_source=gb-gplus-sharePatente US7245018 - Wiring material, semiconductor device provided with a wiring using the wiring material and method of manufacturing thereof
Wiring material, semiconductor device provided with a wiring using the ...
