A method of forming a field effect transistor includes the following steps. A trench is formed in a semiconductor region, and a shield dielectric layer lining lower sidewalls and a bottom surface of the trench is formed. A shield electrode is formed in a lower portion of the trench, and a dielectric...http://www.google.es/patents/US7473603?utm_source=gb-gplus-sharePatente US7473603 - Method for forming a shielded gate trench FET with the shield and gate electrodes being connected together
Method for forming a shielded gate trench FET with the shield and gate ...
