Quantum wells and associated barriers layers can be grown to include nitrogen (N), aluminum (Al), antimony (Sb), phosphorous (P) and/or indium (In) placed within or about a typical GaAs substrate to achieve long wavelength VCSEL performance, e.g., within the 1260 to 1650 nm range. In accordance with...http://www.google.es/patents/US6922426?utm_source=gb-gplus-sharePatente US6922426 - Vertical cavity surface emitting laser including indium in the active region
Vertical cavity surface emitting laser including indium in the active region
