It is an object to provide a semiconductor device having a copper wiring structure in which a copper diffusion preventing capability of a silicon carbide film can be improved and a lifetime maintained until a dielectric breakdown caused by copper diffusion can be increased, and furthermore, a method...http://www.google.es/patents/US20030089988?utm_source=gb-gplus-sharePatente US20030089988 - Semiconductor device and method of manufacturing the same
Semiconductor device and method of manufacturing the same
Número de solicitud: 10/216,818 Número de publicación: US 2003/0089988 A1 Fecha de presentación: 13 Ago 2002 Patente emitida: US6737746 ( Fecha de emisión 18 May 2004)
