A first plurality of memory cells is in a first plane in a first column of the array. A second plurality of memory cells is in a second plane in the same column. The second plurality of memory cells are coupled to the first plurality of memory cells through a series connection of their source/drain ...http://www.google.es/patents/US20090218611?utm_source=gb-gplus-sharePatente US20090218611 - HIGH DENSITY STEPPED, NON-PLANAR FLASH MEMORY
Número de solicitud: 12/465,858 Número de publicación: US 2009/0218611 A1 Fecha de presentación: 14 May 2009 Patente emitida: US8017988 ( Fecha de emisión 13 Sep 2011)
