A semiconductor device comprises a silicon substrate, an electrical wiring metal, an insulating film formed on the silicon substrate, a plurality of contact holes formed in the insulating film for connecting the silicon substrate and the electrical wiring metal to each other, and a titanium silicide...http://www.google.es/patents/US6031288?utm_source=gb-gplus-sharePatente US6031288 - Semiconductor integrated circuit device for connecting semiconductor region and electrical wiring metal via titanium silicide layer and method of fabrication thereof
Semiconductor integrated circuit device for connecting semiconductor region ...
