An improved CVD process, preferably a PECVD process, for forming a low-dielectric-constant insulating material on a semiconductor substrate, or on and/or under a metal barrier, or etch stop layer of SiNx, Ta(N), TiN, WNx and others. Specifically, the improved PECVD process provides for deposition of...http://www.google.es/patents/US6303518?utm_source=gb-gplus-sharePatente US6303518 - Methods to improve chemical vapor deposited fluorosilicate glass (FSG) film adhesion to metal barrier or etch stop/diffusion barrier layers
Methods to improve chemical vapor deposited fluorosilicate glass (FSG) film ...
