A self-aligned polysilicon thin film transistor, and a method for manufacturing it, is descrbed. An insulating substrate is provided. A gate electrode is formed on the insulating substrate. A protective light-absorbing layer is formed over the gate electrode and over the insulating substrate. The protective...http://www.google.es/patents/US5612235?utm_source=gb-gplus-sharePatente US5612235 - Method of making thin film transistor with light-absorbing layer
Method of making thin film transistor with light-absorbing layer
