A method of manufacturing a semiconductor device having a single crystal pn junction formed in a Group II-VI compound semiconductor crystal, by: growing a Group II-VI compound semiconductor crystal substrate of n type from a melt of a crystal-constituting Group VI element other than Te; forming a crystal...http://www.google.es/patents/US4685979?utm_source=gb-gplus-sharePatente US4685979 - Method of manufacturing a group II-VI compound semiconductor device having a pn junction
Method of manufacturing a group II-VI compound semiconductor device having a ...
