A method of forming a local interconnect includes forming at least two transistor gates over a semiconductor substrate. A local interconnect layer is deposited to overlie at least one of the transistor gates and interconnect at least one source/drain region of one of the gates with semiconductor substrate...http://www.google.es/patents/US6797600?utm_source=gb-gplus-sharePatente US6797600 - Method of forming a local interconnect
