The present invention generally provides methods and apparatuses that are adapted to form a high quality dielectric gate layer on a substrate. Embodiments contemplate a method wherein a metal plasma treatment process is used in lieu of a standard nitridization process to form a high dielectric constant...http://www.google.es/patents/US7678710?utm_source=gb-gplus-sharePatente US7678710 - Method and apparatus for fabricating a high dielectric constant transistor gate using a low energy plasma system
Method and apparatus for fabricating a high dielectric constant transistor ...
