A semiconductor device including a lateral field-effect transistor and Schottky diode and method of forming the same. In one embodiment, the lateral field-effect transistor includes a buffer layer having a contact covering a substantial portion of a bottom surface thereof, a lateral channel above the...http://www.google.es/patents/US7504673?utm_source=gb-gplus-sharePatente US7504673 - Semiconductor device including a lateral field-effect transistor and Schottky diode
Semiconductor device including a lateral field-effect transistor and ...