A process for fabricating a MOS transistor having a full-overlap lightly-doped drain is disclosed. The MOS transistor is fabricated on a semiconductor silicon substrate that has formed thereon a field oxide layer that defines the active region of the MOS transistor. A field oxide layer is first used...http://www.google.es/patents/US5538913?utm_source=gb-gplus-sharePatente US5538913 - Process for fabricating MOS transistors having full-overlap lightly-doped drain structure
Process for fabricating MOS transistors having full-overlap lightly-doped ...
