Methods, systems, and apparatuses for electronic devices having improved gate structures are described. An electronic device includes at least one nanowire. A gate contact is positioned along at least a portion of a length of the at least one nanowire. A dielectric material layer is between the gate...http://www.google.es/patents/US7701014?utm_source=gb-gplus-sharePatente US7701014 - Gating configurations and improved contacts in nanowire-based electronic devices
Gating configurations and improved contacts in nanowire-based electronic devices
