In order to provide a light oxidation process technique for use in a CMOS LSI employing a polymetal gate structure and a dual gate structure, so that both oxidation of a refractory metal film constituting a part of a gate electrode and diffusion of boron contained in a p-type polycrystalline silicon...http://www.google.es/patents/US20020004263?utm_source=gb-gplus-sharePatente US20020004263 - Process for producing semiconductor integrated circuit device and semiconductor integrated circuit device
Process for producing semiconductor integrated circuit device and ...
Número de solicitud: 09/929,091 Número de publicación: US 2002/0004263 A1 Fecha de presentación: 15 Ago 2001 Patente emitida: US6784038 ( Fecha de emisión 31 Ago 2004)
