A method and apparatus for depositing a low dielectric constant film by reaction of an organosilicon compound and an oxidizing gas at a constant RF power level from about 10 W to about 200 W or a pulsed RF power level from about 20 W to about 500 W. Dissociation of the oxidizing gas can be increased...http://www.google.es/patents/US6303523?utm_source=gb-gplus-sharePatente US6303523 - Plasma processes for depositing low dielectric constant films
Plasma processes for depositing low dielectric constant films
