A chalcogenide phase change memory cell has a substrate with a conductor line. The conductor line has a contact end. An insulating layer is located over the substrate and conductor line. An aperture is located in the insulating layer. The aperture extends to the substrate. A memory material is conformally...http://www.google.es/patents/US20060113521?utm_source=gb-gplus-sharePatente US20060113521 - Chalcogenide memory having a small active region
Número de solicitud: 11/001,424 Número de publicación: US 2006/0113521 A1 Fecha de presentación: 30 Nov 2004 Patente emitida: US7202493 ( Fecha de emisión 10 Abr 2007)
