An N-channel double level poly, MOS read only memory or ROM array is electrically programmable by floating gates which are interposed between the gate oxide and control gates formed by polycrystalline silicon row address lines. The cells may be electrically programmed by applying selected voltages to...http://www.google.es/patents/US4184207?utm_source=gb-gplus-sharePatente US4184207 - High density floating gate electrically programmable ROM
High density floating gate electrically programmable ROM
