In a method of manufacturing a semiconductor device, an insulating film having an opening is formed on an amorphous film 103 containing silicon therein. After catalytic elements are introduced from the opening, the amorphous film 103 is crystallized. Thereafter elements (phosphorus) selected from Group...http://www.google.es/patents/US6368904?utm_source=gb-gplus-sharePatente US6368904 - Semiconductor device and method of manufacturing the same
Semiconductor device and method of manufacturing the same
