A silicon nitride layer in a semiconductor device is oxidized by exposure to a mixture of an oxygen reactant and a dilute amount of a fluorine-containing compound at a temperature sufficiently high to substantially cause the oxidation of the silicon nitride. Generally, a temperature greater than about...http://www.google.es/patents/US5434109?utm_source=gb-gplus-sharePatente US5434109 - Oxidation of silicon nitride in semiconductor devices
Oxidation of silicon nitride in semiconductor devices
