Phase change memory cell structures and methods for fabricating the same are provided. An exemplary embodiment of a phase change memory cell structure includes a first electrode formed over a first dielectric layer. A second dielectric layer is formed over the first electrode. A conductive member is...http://www.google.es/patents/US7923714?utm_source=gb-gplus-sharePatente US7923714 - Phase change memory cell structures and methods for manufacturing the same
Phase change memory cell structures and methods for manufacturing the same
