A method of forming a fin field effect transistor on a semiconductor substrate includes forming a fin-shaped active region vertically protruding from the substrate. An oxide layer is formed on a top surface and opposing sidewalls of the fin-shaped active region. An oxidation barrier layer is formed on...http://www.google.es/patents/US20080029828?utm_source=gb-gplus-sharePatente US20080029828 - FIN FIELD EFFECT TRANSISTORS INCLUDING OXIDATION BARRIER LAYERS
FIN FIELD EFFECT TRANSISTORS INCLUDING OXIDATION BARRIER LAYERS
Número de solicitud: 11/871,453 Número de publicación: US 2008/0029828 A1 Fecha de presentación: 12 Oct 2007 Patente emitida: US7745871 ( Fecha de emisión 29 Jun 2010)
