A contact structure, including a first conducting region having a first thin portion with a first sublithographic dimension in a first direction; a second conducting region having a second thin portion with a second sublithographic dimension in a second direction transverse to said first direction; the...http://www.google.es/patents/US7227171?utm_source=gb-gplus-sharePatente US7227171 - Small area contact region, high efficiency phase change memory cell and fabrication method thereof
Small area contact region, high efficiency phase change memory cell and ...
