A method of forming an interlayer dielectric on a semiconductor device is disclosed. First, a phosphorous doped oxide layer is deposited on the semiconductor device to fill gaps and provide phosphorous for gettering. Then, an undoped oxide layer is deposited and planarized using chemical mechanical polishing...http://www.google.es/patents/US5953635?utm_source=gb-gplus-sharePatente US5953635 - Interlayer dielectric with a composite dielectric stack
Interlayer dielectric with a composite dielectric stack
