A heterojunction bipolar transistor (HBT) having a base-emitter junction that exhibits the desirable properties of a GaAsSb/AlInAs interface, but which includes an intermediate layer in the emitter such that the intermediate layer contacts the GaAsSb base and the AlInAs emitter. The intermediate layer...http://www.google.es/patents/US6696710?utm_source=gb-gplus-sharePatente US6696710 - Heterojunction bipolar transistor (HBT) having an improved emitter-base junction
Heterojunction bipolar transistor (HBT) having an improved emitter-base junction
