A ferroelectric memory device according to the present invention comprises a plurality of bit lines carrying data signals and voltage signals, every adjacent two of the bit lines being paired to form a plurality of bit line pairs; sense amplifiers connected to each of the bit line pairs; a plurality...http://www.google.es/patents/US5414654?utm_source=gb-gplus-sharePatente US5414654 - Driving circuit of a ferroelectric memory device and a method for driving the same
Driving circuit of a ferroelectric memory device and a method for driving ...
