A low-temperature (350.degree. C. to 750.degree. C.) in-situ dry cleaning process for removing native oxide (and other contaminants) from a semiconductor wafer surface, that can be used with either batch or single-wafer semiconductor device manufacturing reactors. A wafer is contacted with a dry cleaning...http://www.google.es/patents/US5403434?utm_source=gb-gplus-sharePatente US5403434 - Low-temperature in-situ dry cleaning process for semiconductor wafer
Low-temperature in-situ dry cleaning process for semiconductor wafer
