A chemical vapor deposition reactor having a process chamber accommodating a substrate holder for wafers, a first gas flow of reactive gases to process the wafers and a crown-shaped gas-collector surrounding the substrate-holder, wherein said reactor further comprises: a base plate and a cover plate...http://www.google.es/patents/US6899764?utm_source=gb-gplus-sharePatente US6899764 - Chemical vapor deposition reactor and process chamber for said reactor
Chemical vapor deposition reactor and process chamber for said reactor