In a split gate type nonvolatile memory device, a supplementary layer pattern is disposed on a source region of a semiconductor substrate. Since the source region is vertically extended by virtue of the presence of the supplementary layer pattern, it is therefore possible to increase an area of a region...http://www.google.es/patents/US7429766?utm_source=gb-gplus-sharePatente US7429766 - Split gate type nonvolatile memory device
