A method of programming a NAND-type flash memory device having bitlines and wordlines, and memory strings composed of memory cells serially connected between string select transistors coupled to each of the bitlines and ground select transistors coupled to a source line. The method comprises of applying...http://www.google.es/patents/US6661707?utm_source=gb-gplus-sharePatente US6661707 - Method of programming NAND-type flash memory
