Methods of manufacturing power semiconductor devices include forming an epitaxial and dielectric layer, patterning and etching the dielectric layer, forming a first oxide layer, forming a first conductive layer on top of the first oxide layer, etching the first conductive layer away inside an active...http://www.google.es/patents/US20110312166?utm_source=gb-gplus-sharePatente US20110312166 - Methods of Manufacturing Power Semiconductor Devices with Shield and Gate Contacts
Methods of Manufacturing Power Semiconductor Devices with Shield and Gate ...
Número de solicitud: 13/219,281 Número de publicación: US 2011/0312166 A1 Fecha de presentación: 26 Ago 2011 Patente emitida: US8129245 ( Fecha de emisión 6 Mar 2012)
