A method and apparatus for depositing a low dielectric constant film by reaction of an organosilicon compound and an oxidizing gas comprising carbon at a constant RF power level. Dissociation of the oxidizing gas can be increased prior to mixing with the organosilicon compound, preferably within a separate...http://www.google.es/patents/US7560377?utm_source=gb-gplus-sharePatente US7560377 - Plasma processes for depositing low dielectric constant films
Plasma processes for depositing low dielectric constant films
