High quality epitaxial layers of monocrystalline oxide materials (24) are grown overlying monocrystalline substrates such as large silicon wafers (22) using RHEED information to monitor the growth rate of the growing film. The monocrystalline oxide layer (24) may be used to form a compliant substrate...http://www.google.es/patents/US6667196?utm_source=gb-gplus-sharePatente US6667196 - Method for real-time monitoring and controlling perovskite oxide film growth and semiconductor structure formed using the method
Method for real-time monitoring and controlling perovskite oxide film growth ...
