A method of depositing dielectric films such as silicon nitride, oxide, oxynitride, and multilayer films on the surface of a substrate is provided. The method comprises providing a substrate in a hot-wall rapid thermal processing chamber, and using a silicon precursor to form a dielectric film on the...http://www.google.es/patents/US20030104707?utm_source=gb-gplus-sharePatente US20030104707 - System and method for improved thin dielectric films
System and method for improved thin dielectric films
