In a semiconductor device and a method of manufacturing the semiconductor device, the source wires 126 of a pixel portion 205 are formed of material having low resistance (representatively, aluminum, silver, copper). The source wires of a driving circuit are formed in the same process as the gate wires...http://www.google.es/patents/US20040124418?utm_source=gb-gplus-sharePatente US20040124418 - Semiconductor device and method of manufacturing the same
Semiconductor device and method of manufacturing the same
Número de solicitud: 10/737,593 Número de publicación: US 2004/0124418 A1 Fecha de presentación: 16 Dic 2003 Patente emitida: US7161179 ( Fecha de emisión 9 Ene 2007)
