The invention relates to a method of manufacturing a semiconductor device comprising a semiconductor body (1) having a buried insulating layer (7). Such a type of semiconductor device is known as a device of the SOI type. According to the invention, the starting material is a substrate (1) of monocrystalline...http://www.google.es/patents/US4925805?utm_source=gb-gplus-sharePatente US4925805 - Method of manufacturing a semiconductor device having an SOI structure using selectable etching
Method of manufacturing a semiconductor device having an SOI structure using ...
