In an embodiment, a trench is formed above a via from a photo resist (PR) trench pattern in a dielectric layer. The trench is defined by two sidewall portions and base portions. The base portions of the sidewalls are locally treated by a post treatment using the PR trench pattern as mask to enhance mechanical...http://www.google.es/patents/US6998216?utm_source=gb-gplus-sharePatente US6998216 - Mechanically robust interconnect for low-k dielectric material using post treatment
Mechanically robust interconnect for low-k dielectric material using post ...
