A method of manufacturing a semiconductor device containing a ruthenium oxide includes the step of dry-etching the ruthenium oxide using a gas mixture containing oxygen or ozone gas and at least one material selected from the group consisting of fluorine gas, chlorine gas, bromine gas, iodine gas, a...http://www.google.es/patents/US5624583?utm_source=gb-gplus-sharePatente US5624583 - Method of manufacturing semiconductor device
