A method is disclosed for forming an ultrathin oxide layer of uniform thickness. The method is particularly advantageous for producing uniformly thin interfacial oxides beneath materials of high dielectric permittivity, or uniformly thin passivation oxides. Hydrofluoric (HF) etching of a silicon surface,...http://www.google.es/patents/US6492283?utm_source=gb-gplus-sharePatente US6492283 - Method of forming ultrathin oxide layer
