A semiconductor device forming a capacitor through an interlayer insulating layer on a semiconductor substrate on which an integrated circuit is formed. This semiconductor device has an interlayer insulating layer with moisture content of 0.5 g/cm.sup.3 or less, which covers the capacitor in one aspect,...http://www.google.es/patents/US6015987?utm_source=gb-gplus-sharePatente US6015987 - Semiconductor device having capacitor exhibiting improved mositure resistance and manufacturing method thereof
Semiconductor device having capacitor exhibiting improved mositure ...
