In accordance with an embodiment of the present invention, a semiconductor device is formed as follows. An exposed surface area of a silicon layer where silicon can be removed is defined. A portion of the silicon layer is removed to form a middle section of a trench extending into the silicon layer from...http://www.google.es/patents/US6916745?utm_source=gb-gplus-sharePatente US6916745 - Structure and method for forming a trench MOSFET having self-aligned features
Structure and method for forming a trench MOSFET having self-aligned features
