Structures and methods for NOR flash memory cells, arrays and systems are provided. The NOR flash memory cell includes a vertical floating gate transistor extending outwardly from a substrate. The floating gate transistor having a first source/drain region, a second source/drain region, a channel region...http://www.google.es/patents/US20030235079?utm_source=gb-gplus-sharePatente US20030235079 - Nor flash memory cell with high storage density
Número de solicitud: 10/177,483 Número de publicación: US 2003/0235079 A1 Fecha de presentación: 21 Jun 2002 Patente emitida: US6996009 ( Fecha de emisión 7 Feb 2006)
