The process for creating multi-megabit DRAM memories comprises the following sequence of steps, which commence following an anisotropic etch of a first layer of type-1 insulative material (e.g. silicon dioxide), which creates wordline sidewall spacers: CVD deposition of a gap-filling layer of a type-2...http://www.google.es/patents/US5100826?utm_source=gb-gplus-sharePatente US5100826 - Process for manufacturing ultra-dense dynamic random access memories using partially-disposable dielectric filler strips between wordlines
Process for manufacturing ultra-dense dynamic random access memories using ...
