Titianium nitride film is deposited upon a semi-conductor substrate by chemical vapor deposition of titanium tetrachloride, ammonia and a diluent at temperatures less than 550.degree. C. This is accomplished by minimizing the boundary layer thickness over the substrate....http://www.google.es/patents/US5378501?utm_source=gb-gplus-sharePatente US5378501 - Method for chemical vapor deposition of titanium nitride films at low temperatures
Method for chemical vapor deposition of titanium nitride films at low ...
