An amorphous semiconductor film is etched so that a width of a narrowest portion thereof is 100 .mu.m or less, thereby forming island semiconductor regions. By irradiating an intense light such as a laser into the island semiconductor regions, photo-annealing is performed to crystallize it. Then, of...http://www.google.es/patents/US6204099?utm_source=gb-gplus-sharePatente US6204099 - Method for producing insulated gate thin film semiconductor device
Method for producing insulated gate thin film semiconductor device
