Methods of providing silicon oxide on a substrate in a single process step by simultaneously introducing both a silicon source gas and an etch gas into a CVD chamber. As a result, the method will typically involve simultaneous deposition and etching of the silicon oxide. The method is particularly useful...http://www.google.es/patents/US7112531?utm_source=gb-gplus-sharePatente US7112531 - Silicon oxide co-deposition/etching process