A family of semiconductor devices is formed in a substrate that contains no epitaxial layer. In one embodiment the family includes a 5V CMOS pair, a 12V CMOS pair, a 5V NPN, a 5V PNP, several forms of a lateral trench MOSFET, and a 30V lateral N-channel DMOS. Each of the devices is extremely compact,...http://www.google.es/patents/US7135738?utm_source=gb-gplus-sharePatente US7135738 - Modular bipolar-CMOS-DMOS analog integrated circuit and power transistor technology
Modular bipolar-CMOS-DMOS analog integrated circuit and power transistor ...
