A method of forming a PE-TEOS layer of a semiconductor IC device provides uniformly thick PE-TEOS layers on a batch of wafers. First, a loading wafer cassette is prepared to provide the wafers to be processed. Next, a process atmosphere is pre-created in a processing chamber. Then the wafers are supplied...http://www.google.es/patents/US7268089?utm_source=gb-gplus-sharePatente US7268089 - Method for forming PE-TEOS layer of semiconductor integrated circuit device
Method for forming PE-TEOS layer of semiconductor integrated circuit device